? 2007 ixys corporation, all rights reserved ds99821 (04/07) symbol test conditions maximum ratings v dss t j = 25c to 175c 200 v v gsm transient 30 v i d25 t c = 25c 102 a i lrms lead current limit, rms 75 a i dm t c = 25c, pulse width limited by t jm 250 a i as t c = 25c 5 a e as t c = 25c 1.2 j dv/dt i s i dm , di/dt 100 a/ms, v dd v dss 7 v/ns t j 175c, r g = 2.5 p d t c = 25c 750 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247 & to-3p) 1.13 / 10 nm/lb.in. f c mounting force (plus220) 11..65 / 2.5..14.6 n/lb. weight to-247 6 g to-3p 5.5 g plus220 4 g symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 1 ma 2.5 4.5 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 , notes 1, 2 18 23 m trenchhv tm power mosfet n-channel enhancement mode avalanche rated IXTH102N20T ixtq102n20t ixtv102n20t v dss = 200 v i d25 = 102 a r ds(on) 23 m to-3p (ixtq) g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab) preliminary technical information features z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z 175 c operating temperature advantages z easy to mount z space savings z high power density g s d plus220 (ixtv) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTH102N20T ixtq102n20t ixtv102n20t symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 55 92 s c iss 6800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 722 pf c rss 126 pf t d(on) resistive switching times 19 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 26 ns t d(off) r g = 2.5 (external) 50 ns t f 25 ns q g(on) 114 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 34 nc q gd 31 nc r thjc 0.20 c/w r thcs 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25c unless otherwise specified) min. typ. max. i s v gs = 0 v 102 a i sm pulse width limited by t jm 330 a v sd i f = 50 a, v gs = 0 v, note 1 1.2 v t rr i f = 50 a, -di/dt = 100 a/ s 130 ns v r = 50 v, v gs = 0 v notes: 1. pulse test, t 300 ms, duty cycle, d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ?p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimen- sions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 plus220 (ixtv) outline
? 2007 ixys corporation, all rights reserved IXTH102N20T ixtq102n20t ixtv102n20t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 51a value vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 102a i d = 51a fig. 5. r ds(on) normalized to i d = 51a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 20 40 60 80 100 120 140 160 180 200 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXTH102N20T ixtq102n20t ixtv102n20t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.43.84.24.6 5 5.45.86.26.6 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120 q g - nanocoulombs v gs - volts v ds = 100v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2007 ixys corporation, all rights reserved IXTH102N20T ixtq102n20t ixtv102n20t fig. 14. resistive turn-on rise time vs. drain current 21 22 23 24 25 26 27 50 55 60 65 70 75 80 85 90 95 100 105 i d - amperes t r - nanoseconds r g = 2.5 v gs = 15v v ds = 100v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 22 24 26 28 30 32 34 2345678910 r g - ohms t r - nanoseconds 19 20 21 22 23 24 25 26 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 102a, 51a fig. 16. resistive turn-off switching times vs. junction temperature 18 19 20 21 22 23 24 25 26 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 70 75 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2.5 , v gs = 15v v ds = 100v i d = 51a i d = 102a fig. 17. resistive turn-off switching times vs. drain current 18 19 20 21 22 23 24 25 26 27 28 50 55 60 65 70 75 80 85 90 95 100 105 i d - amperes t f - nanoseconds 40 43 46 49 52 55 58 61 64 67 70 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2.5 , v gs = 15v v ds = 100v t j = 125oc t j = 25oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 21 22 23 24 25 26 27 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2.5 v gs = 15v v ds = 100v i d = 102a i d = 51a fig. 18. resistive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 65 70 75 2345678910 r g - ohms t f - nanoseconds 40 50 60 70 80 90 100 110 120 130 140 150 160 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 51a, 102a ixys ref: t_102n20t (7w) 4-13-07-a.xls
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